YFWG30T65LAP 30A 650V TO-247 marking: YFWG30T65LAP IGBT yfwdiode brand

yfwdiode MOS transistor manufacture YFWG30T65LAP TO-247 data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_ YFWG30T65LAP TO-247_www.yfwdiode

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Model: YFWG30T65LAP 

 Package: TO-247 

 Collector-emitter voltage VCES: 650V 

 Continuous collector current Ic (TC=100°C): 30A 

 Gate-emission pole threshold voltage: VGE=Vce, lc=1mA VGE(th)=5.9V 

 Collector-emitter saturation voltage: VGE=15V Ic=30A VCE(sat)=1.7V 

 Turn off energy Eoff: 0.6mj 

 Forward voltage VF: 1.4V 

 Number of pins: 3 

 Product characteristics: high anti-disturbance performance, 10 microsecond short circuit ability, positive VCE (saturated) temperature coefficient 

 High efficiency of motor control, excellent current distribution during parallel operation, complies with RoHS standards 

 Product application: household appliances, motor drive, universal inverter 

 Welcome to consult Youfeng Microelectronics. Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes low-pressure descending Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast-recovery bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection components, voltage-stabilized diodes, transistors, controlled silicon thyristors, MOS field effectors, etc. More details can be found on our official website www.yfwdiode.com.

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