BD649 8A 100V TO-220AB marked BD649 NPN power transistor YFW micro

Model: BD649 Package: TO-220AB Collector-Base Voltage BV(cbo): 00V Collector-Emitter Voltage BV(ceo): 100V Emitter Base Voltage BV(ebo):5V Collector Current IC: 8A Direct Current Gain: VCE=3V IC=0.5A hFE=1500                      VCE=3V IC=3A hFE=750                      VCE=3V IC=6A hFE=750 Collector-Emitter Saturation Voltage: IC=3A IB=12mA VCE(sat)=2.0V Pin Count: 3 Product Characteristics: 62.5 W at 25°C operating temperature 8A continuous collector current And BD650 complementary Current at 3, 3A, minimum hFE of 750 Low collector-emitter saturation voltageProduct Characteristics: High voltage and high current; Excellent hFE linearity; High hFE; Low noiseProduct Application: High Fidelity Audio Amplifier General Purpose Power AmplifierProduct Applications: Medium power linear and switch applicationsProduct Applications: Medium power linear and switch applicationsProduct Applications: Medium power linear and switch applicationsProduct Application: This is used as medium power amplifier and switchProduct Applications: Audio Power Amplifier DC-DC Converter Voltage RegulatorProduct Application: High-Definition CRT Displays, VideoProduct Application: High voltage general purpose applications Suitable forersFor more information, please contact "Youfeng Microelectronics" Our company is a high-tech enterprise specializing in the research, development, production, and sales of semiconductor discrete devices. The company mainly produces and sells: general rectifier diodes fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes, low-dropout Schottky diodes, silicon carb diodes, rectifier bridge stacks, fast recovery rectifier bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection elements, Zenerodes, transistors, thyristors, MOS field-effect transistors, etc. For more details, please visit our company's official website at www.yfwdi.com.