A new high-speed silicon PIN photodiode with enhanced

Date:2025-03-18 Categories:Industry News Hits:818 From:Guangdong Youfeng Microelectronics Co., Ltd(YFW)


A new high-speed silicon PIN photodiode with enhanced sensitivity in the visible range has been launched to expand the photodiode product portfolio. Vishay Semiconductors device, which is available in a small 2.0 mm x 1.8 mm x 0.6 mm top-view surface-mount package, offers advanced sensitivity in clear epoxy with a fast switching time of 70 ns, a low capacitance of 17.6 pF, and is ideal for accurate signal detection in wearable devices. The newly released device, with a sensitive area of 1.51 mm2, exhibits a high photosensitivity (reverse photo current 1.17 µA, dark current 0.03 nA) and is capable of detecting visible light and near-infrared radiation from 350 nm to 1100 nm over a wide spectral range. The photodiode is suitable for wearable devices such as fitness trackers and smart watches, paired with a green LED for optical heart rate detection, and with a red LED for pulse oximetry. Compared to the previous generation solution, the new device is smaller in size, making it easier to integrate into small products such as earbuds; the optical system can incorporate several photodiodes for more precise signal detection; and it also enhances the flexibility of sensor layout. The device also has a lower cost than the previous photodiode, making it an ideal choice for cost-sensitive devices such as smart bands. With a half-power angle of ± 67°, the operating temperature range of -40 °C to  85 °C, and a peak sensitivity wavelength of 940 nm. The photodiode complies with the RoHS and Vishay green standards, is halogen-free, has a moisture sensitivity level (MSL) of J-STD-020 level 3, and can be stored in the workshop for 168 hours.


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