yfwdiode MOS transistor manufacture KBP306-R KBP data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_KBP306-R KBP_www.yfwdiode.com
Model: KBP306-R
Encapsulation: KBP
Maximum repeated peak reverse voltage Vrrm: 800V
Maximum RMS voltage Vrms: 560V
Maximum DC blocking voltage Vdc: 800V
Average rectifier forward current l (FAV): 3A
Positive electric surge peak I (FSM): 80A
Positive voltage VF: 1.1V
Reverse current IR: 10uA
Number of pins: 4
Product characteristics: high current capacity, low forward voltage drop, glass passivanized chip junction
Low power consumption, high efficiency, in line with the lead-free requirements of EU RoHS Directive 2011/65/EU
Product application: suitable for printed circuit boards
Welcome to consult Youfeng Microelectronics. Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes, low-voltage drop Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast recovery rectifier bridge stacks, Schottky bridge reactors, TVs transient suppression diodes, ESD electrostatic protection components, voltage stabilized diodes, transistors, thyristors, MOS field effectors, etc. For more details, please visit our official website www.yfwdiode.com.
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