yfwdiode MOS transistor manufacture GBJ3501S GBJS data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_GBJ3501S GBJS_www.yfwdiode.com
Model: GBJ3501S
Encapsulation: GBJS (with heat sink)
Maximum Repeated Peak Reverse Voltage Vrrm: 100V
Maximum RMS voltage Vrms: 70V
Maximum DC blocking voltage Vdc: 100V
Average rectification positive current l(FAV): 35A
Positive electric surge peak I (FSM): 480A
Positive voltage VF: 1.1V
Reverse current IR: 5uA
Number of pins: 4
Product features: glass passivation chip, low reverse leakage current, high surge current ability
Terminal-to-shell isolation voltage: 2500V
Product application: suitable for printed circuit boards
Welcome to consult "Youfeng Microelectronics". Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes, low-pressure drop Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast recovery rectifier bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection elements Parts, voltage regulator diodes, transistors, controllable silicon thyristors, MOS field effect tubes, etc. For more details, please visit our official website www.yfwdiode.com.
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