BT136-600E 4A 600V TO-220C markingBT136-600E Controllable Silicon yfwdiode brand

yfwdiode MOS transistor manufacture BT136-600E TO-220C data ,datasheet,Pin diagram,Package Specifications,manufacturer,Find MOS transistor_ BT136-600E TO-220C_www.yfwdiode

Hits:263 times

Model: BT136-600E 

 Package: TO-220C 

 Repeat peak shutdown voltage VDRM: 600V 

 Repeat peak reverse voltage VRRM: 600V 

 Current forward voltage IT (RMS) with average value in conduction state: 4A 

 Current of non-repeated peak surge in conduction state (full period, F=50Hz) ITSM: 25A 

 Door trigger current IGT: 10mA 

 Nodth Tj: 125°C 

 Number of pins: 3 

 Product features: It has high resistance to high current shock loads, provides high dv/dt rate and strong electromagnetic interference resistance. 

 Product applications: power charger, T-tool, massager, solid-state relay, AC motor speed adjustment, etc. 

 Welcome to consult Youfeng Microelectronics. Our company is a high-tech enterprise specializing in the research and development, production and sales of semiconductor discrete devices. The company mainly produces and sells: ordinary rectifier diodes, fast recovery diodes, high-efficiency diodes, ultra-fast recovery diodes, Schottky diodes low-pressure descending Schottky diodes, silicon carbide diodes, rectifier bridge stacks, fast-recovery bridge stacks, Schottky bridge stacks, TVS transient suppression diodes, ESD electrostatic protection components, voltage-stabilized diodes, transistors, controlled silicon thyristors, MOS field effectors, etc. More details can be found on our official website www.yfwdiode.com.

Previous: YFW20N02AD 20A 20V TO-252 marking:YFW20N02AD MOSFET yfwdiode brand

Next:BTB16Q-800C 16A 800V TO-263 markingBTB16Q-800C Controllable Silicon yfwdiode brand

QQChat
ChatWechat
ConsultTelephone
+86 13650089053